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2SB0745|2SB745 Datasheet

  • 2SB0745|2SB745

  • Small-signal device - Small-signal transistor - General-use ...

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Transistors
2SB0745, 2SB0745A
(2SB745, 2SB745A)
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
鈻?/div>
Features
鈥?/div>
Low noise voltage NV
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9
鹵0.1
(0.4)
Unit: mm
2.5
鹵0.1
(1.0)
(1.0)
3.5
鹵0.1
2.0
鹵0.2
2.4
鹵0.2
(1.5)
(1.5)
R 0.9
R 0.7
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB0745
2SB0745A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
鈭?5
鈭?5
鈭?5
鈭?5
鈭?
鈭?0
鈭?00
400
150
鈭?5
to
+150
V
mA
mA
mW
擄C
擄C
V
Unit
V
1.0
鹵0.1
(0.85)
1.25
鹵0.05
0.45
鹵0.05
0.55
鹵0.1
Collector-emitter voltage 2SB0745
(Base open)
2SB0745A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
3
(2.5)
2
(2.5)
1
1: Base
2: Collector
3: Emitter
M-A1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB0745
2SB0745A
2SB0745
2SB0745A
V
EBO
V
BE
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
NV
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?
V, I
E
=
2 mA, f
=
200 MHz
V
CE
= 鈭?0
V, I
C
= 鈭?
mA, G
V
=
80 dB
R
g
=
100 k鈩? Function
=
FLAT
150
150
180
V
CEO
I
C
= 鈭?
mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
Min
鈭?5
鈭?5
鈭?5
鈭?5
鈭?
鈭?/div>
0.7
鈭?.0
鈭?/div>
0.1
鈭?
700
鈭?/div>
0.6
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
MHz
mV
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
180 to 360
R
260 to 520
S
360 to 700
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2003
SJC00050BED
4.1
鹵0.2
4.5
鹵0.1
1

2SB0745|2SB745相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    For general amplification
    PANASONIC
  • 英文版
    For general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency amplific...
    PANASONIC

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